Gigabyte ga-ep45t-ud3lr.Gigabyte GA-EP45T-UD3LR – motherboard – ATX – LGA775 Socket – P45 Specs

 

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Meet European Union ErP(Energy-related Products) requirement Home theater quality 8-channel High Definition Audio Supports 45nm Intel Core 2 multi-core processors with FSB MHz Natively support dual channel DDR3 + for remarkable system performance 3X USB power delivery for greater compatibility and extra power for USB devices Ultimate graphics performance with PCI-E x16 interface. View and Download Gigabyte GA-EP45T-UD3LR user manual online. LGA socket motherboard for Intel Core TM processor family/ Intel Pentium processor family/Intel Celeron processor family. GA-EP45T-UD3LR motherboard pdf manual download. Gigabyte GA-EP45T-UD3LR – motherboard – ATX – LGA Socket – P45 overview and full product specs on CNET.

 

Gigabyte ga-ep45t-ud3lr.Gigabyte GA-EP45T-UD3LR – motherboard – ATX – LGA Socket – P45 Specs – CNET

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related:
Gigabyte GA-EP45T-UD3LR User Manual
Troubleshooting
GA-EP45T-UD3LR (Rev. ) | Motherboard – GIGABYTE
GA-EP45-UD3LR (rev. 1.1)

Are you a human?
Renesas unveils two lines of 16 Mbit superSRAM chips

Renesas Technology presented
SRAM’s line of low-power, superSRAM chips designed
for use in portable devices such as cell phones.

The first chips released by the company were 16 Mbit solutions of the R1LA1616R series
(1.8V version) and R1LV1616R (3V version). The chip area is 32
mm2 is the smallest size that can be achieved using 0.15-μm standards
technical process.

The chips are presented in a 52-pin μTSOP package (10.79 x 10.49 mm) ?
on the picture ? left and 48-pin FBGA (7.5 x 8.five). The same chips will eventually
offered in MCP housing. In the second phase of superSRAM release, Renesas plans
release 32 Mbit chips in 52-pin µTSOP.

Small chip size achieved through the use of a new type of cell
memory, which is essentially a combination of SRAM and DRAM cells – on the one hand,
p-channel thin-film transistor and n-channel MOSFET, which is typical for
SRAM cells, on the other hand, is a stacked capacitor, which is typical for DRAM.
So the cell size is about half that of the CMOS cell
SRAM with 6-transistor structure (using the same process technology,
of course).

Name
Supply voltage. architecture, packaging,
access time
R1LA1616R series
R1LA1616RSD-7SI
one.8 V, 1Mx16, 52 pin TSOP, 70 ns
R1LA1616RSD-8SI
one.8 V, 1Mx16, 52 pin TSOP, 85 ns
R1LA1616RBG-7SI
one.8 V, 1Mx16, 48 ball f-BGA, 70 ns
R1LA1616RBG-8SI
one.8 V, 1Mx16, 48 ball f-BGA, 85 ns
R1LV1616R series
R1LV1616RSD-7SI
3 V, 1Mx16, 52 pin TSOP, 70 ns
R1LV1616RSD-8SI
3 V, 1Mx16, 52 pin TSOP, 85 ns
R1LV1616RBG-7SI
3 V, 1Mx16, 48 ball f-BGA, 70 ns
R1LV1616RBG-8SI
3 V, 1Mx16, 48 ball f-BGA, 85 ns

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